Technical Library | 1999-08-05 10:34:17.0
This document defines a set of standard test structures with which to benchmark the electrostatic discharge (ESD) robustness of CMOS technologies. The test structures are intended to be used to evaluate the elements of an integrated circuit in the high current and voltage ranges characteristic of ESD events. Test structures are given for resistors, diodes, MOS devices, interconnects, silicon control rectifiers, and parasitic devices. The document explains the implementation strategy and the method of tabulating ESD robustness for various technologies.
Technical Library | 2011-08-18 19:12:04.0
Overview of ESD, Associated Risks and Prevention Measures
Technical Library | 2013-06-27 14:00:27.0
While IC level ESD design and the necessary protection levels are well understood, system ESD protection strategy and design efficiency have only been dealt with in an ad hoc manner. This is most obvious when we realize that a consolidated approach to system level ESD design between system manufacturers and chip suppliers has been rare. This White Paper discusses these issues in the open for the first time, and offers new and relevant insight for the development of efficient system level ESD design.
Technical Library | 2010-10-13 17:29:21.0
The number of failures caused by electrostatic discharges (ESD) has been increasing for some time now. So, it is necessary for everyone, who handles electrostatic sensitive devices (ESDS), to know the reasons of such failures. This presentation will give
Technical Library | 2014-04-03 18:01:13.0
A system level modeling methodology is presented and validated on a simple case. It allows precise simulations of electrostatic discharge (ESD) stress propagation on a printed circuit board (PCB). The proposed model includes the integrated circuit (IC) ESD protection network, IC package, PCB lines, passives components, and externals elements. The impact of an external component on the ESD propagation paths into an IC is demonstrated. Resulting current and voltage waveforms are analyzed to highlight the interactions between all the elements of an operating PCB. A precise measurement technique was designed and used to compare with the simulation results. The model proposed in this paper is able to predict, with good accuracy, the propagation of currents and voltages into the whole system during ESD stress. It might be used to understand why failures occur and how to fix them with the most suitable solution.
Technical Library | 2012-12-14 14:28:20.0
This paper examines the potential failure mechanisms that can damage modern lowvoltage CMOS devices and their relationship to electrical testing. Failure mechanisms such as electrostatic discharge (ESD), CMOS latch-up, and transistor gate oxide degradation can occur as a result of electrical over-voltage stress (EOS). In this paper, EOS due to electrical testing is examined and an experiment is conducted using pulsed voltage waveforms corresponding to conditions encountered during in-circuit electrical testing. Experimental results indicate a correlation between amplitude and duration of the pulse waveform and device degradation due to one or more of the failure mechanisms.
Technical Library | 1999-05-07 08:48:52.0
This paper describes how the quality and reliability of Intel's products are designed, measured, modeled, and maintained. Four main reliability topics: ESD protection, electromigration, gate oxide wearout, and the modeling and management of mechanical stresses are discussed. Based on an analysis of the reliability implications of device scaling, we show how these four topics are of prime importance to component reliability...
Technical Library | 2012-12-14 14:25:37.0
The popularity of low voltage technologies has grown significantly over the last decade as semiconductor device manufacturers have moved to satisfy market demands for more powerful products, smaller packaging, and longer battery life. By shrinking the size of the features they etch into semiconductor dice, IC manufacturers achieve lower costs, while improving speed and building in more functionality. However, this move toward smaller features has lead to lower breakdown voltages and increased opportunities for component overstress and false failures during in-circuit test.
Technical Library | 2015-10-08 17:40:35.0
With the push for ever improving performance on semiconductor component I/O interfaces, semiconductor components are being driven into a realm which makes them more sensitive to electrostatic discharge, potentially increasing in sensitivity by 50% every 3-5 years. Today, the majority of modern day semiconductor components are being designed to meet 250Volts of charge device model sensitivity, and that could decrease to 125Volts in the next 3-5 years, and could again decrease to 50Volts-70Volts in the following 3-5 years. The entire electronics industry must prepare for this challenge.
Technical Library | 2012-02-09 15:26:56.0
The Fundamentals of Signature Analysis Technical document discusses the basics of power-off analog signature analysis, how it relates to basic electronic devices and how it is used for circuit board troubleshooting.