Technical Library | 1999-05-07 08:53:21.0
This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the high-volume manufacture of integrated circuits. It is widely anticipated that improvements in this technology will allow it to remain the semiconductor industry's workhorse through the 100 nm generation of devices. However, some time around the year 2005, so-called Next-Generation Lithographies will be required.
Technical Library | 2020-11-10 15:43:25.0
Flexible hybrid electronics (FHE) interface rigid electronic components with flexible sensors, circuits, and substrates. This paper reports the reliability improvement of a FHE Human Performance Monitor (HPM), designed to monitor electrocardiography (ECG) signals.
Technical Library | 2012-08-16 22:38:05.0
First published in the 2012 IPC APEX EXPO technical conference proceedings. The physical mechanisms behind tin whisker formation in pure tin (Sn) films continue to elude the microelectronics industry. Despite modest advances in whisker mitigation techniqu
Technical Library | 2013-02-07 17:01:46.0
Silicone contamination is known to have a negative impact on assembly processes such as soldering, adhesive bonding, coating, and wire bonding. In particular, silicone is known to cause de-wetting of materials from surfaces and can result in adhesive failures. There are many sources for silicone contamination with common sources being mold releases or lubricants on manufacturing tools, offgassing during cure of silicone paste adhesives, and residue from pressure sensitive tape. This effort addresses silicone contamination by quantifying adhesive effects under known silicone contaminations. The first step in this effort identified an FT-IR spectroscopic detection limit for surface silicone utilizing the area under the 1263 cm-1 (Si-CH3) absorbance peak as a function of concentration (µg/cm2). The next step was to pre-contaminate surfaces with known concentrations of silicone oil and assess the effects on surface wetting and adhesion. This information will be used to establish guidelines for silicone contamination in different manufacturing areas within Harris Corporation... First published in the 2012 IPC APEX EXPO technical conference proceedings.
Technical Library | 2019-04-10 22:08:31.0
The stimulating impact of the automotive industry has sharpened focus on immersion tin (i-Sn) more than ever before. Immersion tin with its associated attributes, is well placed to fulfill the requirements of such a demanding application. In an environment dominated by reliability, the automotive market not only has very stringent specifications but also demands thorough qualification protocols. Qualification is ultimately a costly exercise. The good news is that i-Sn is already qualified by many tier one OSATs. The focus of this paper is to generate awareness of the key factors attributed to soldering i-Sn. Immersion tin is not suitable for wire bonding but ultimately suited for multiple soldering applications. The dominant topics of this paper will be IMC formations in relation to reflow cycles and the associated solderability performance. Under contamination free conditions, i-Sn can provide a solderable finish even after multiple reflow cycles. The reflow conditions employed in this paper are typical for lead free soldering environments and the i-Sn thicknesses are approximately 1 μm.
Technical Library | 2015-09-10 15:06:17.0
A new non-halogen flame retardant has been developed and is useful for a variety of high performance applications. This non-reactive phosphorus-based material satisfies fire safety needs for a broad range of resins including epoxy, polyolefin, and polyamide. The combination of excellent flame retardant efficiency, high thermal stability and exceptional electrical properties is unique to this organophosphorus flame retardant and makes it a breakthrough technology for high speed, high frequency use in fast growing wireless and wired infrastructures. Resin performance data, including formulations with synergists, are presented in this paper.
Technical Library | 1999-08-05 10:52:56.0
This technology transfer was prepared by the Research Triangle Institute (RTI) as part of SEMATECH's Facility Fluids Project (S100). It is a compilation of information on existing facility fluids metric and test methods. Information on standard methods was gathered from SEMATECH and SEMI. Other information was obtained from a literature search of journals and conference proceedings. The published information primarily is concerned with the test equipment used and what levels of detection and purity were found. Many of the articles discussed the use of new equipment, either commercial or experimental. Extensive annotated bibliographies are append to the report.
Technical Library | 1999-05-07 08:48:52.0
This paper describes how the quality and reliability of Intel's products are designed, measured, modeled, and maintained. Four main reliability topics: ESD protection, electromigration, gate oxide wearout, and the modeling and management of mechanical stresses are discussed. Based on an analysis of the reliability implications of device scaling, we show how these four topics are of prime importance to component reliability...
Technical Library | 2015-03-19 20:33:34.0
Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high efficiency, optoelectronic applications.Originally published by the American Physical Society
Technical Library | 2019-06-06 00:19:02.0
More and more people and things are using electronic devices to communicate. Subsequently, many electronic products, in particular mobile base stations and core network nodes, need to handle enormous amounts of data per second. One important link in this communication chain is high speed pressfit connectors that are often used to connect mother boards and back planes in core network nodes. These new high speed pressfit connectors have several hundreds of thin, short and weak pins that are prone to damage. Small variations in via hole dimensions or hole plating thickness affect the connections; if the holes are too small, the pins may be bentor permanently deformed and if the holes are too large they will not form gas tight connections.The goal of this project was to understand how rework of these new high speed pressfit connectors affects connection strengths, hole wall deformations and plating cracks.