Agilent 86105A-202 20GHz Electrical/20GHz Optical Plug-In Module The Agilent 86105A incorporates two measurement channels -- one optical, the second electrical. Each channel has two selectable bandwidth settings. In the lower bandwidth mode of 12
Electronics Forum | Thu Sep 14 14:37:45 EDT 2000 | Serrena Carter
Does anyone know where I can find good rule of thumb information on soldering/brazing. I am most interested learning the maximum recommended CTE mismatch between two different materials that thermally cycle between 25-100C.
Description The E5061B-010 time domain/fault location analysis option allows you to locate the discontinuities and mismatches of devices such as cables. By employing the gating function in the time domain and transforming the data back to the freque
Agilent E4412A The Agilent E4412A diode power sensor, with wide dynamic range, is designed for use with the EPM and EPM-P series power meters for power measurements on CW signals from 10 MHz to 18 GHz. The E4412A power sensor provides extremely l
Industry News | 2019-04-30 17:39:40.0
The SMTA Capital Chapter and UP Media Group/Circuits Assembly Magazine are pleased to co-sponsor an amazing Chapter Tutorial Program. The tutorial will be held on June 11 and showcase the latest technologies, designs and reliability trends.
Industry News | 2018-10-15 18:42:06.0
Indium Corporation expert, Andreas Karch, will present at the IMAPS Autumn Conference, Oct. 18-19 in Munich, Germany. At the conference, Karch will deliver his presentation entitled New Solder Alloy with Extended Temperature Range for High-Reliability Applications. He will review test results that demonstrate how a new alloy excels in harsh environments, including wide temperature range and high CTE mismatch. Karch will also share data from existing application qualifications.
Technical Library | 1999-08-27 09:29:49.0
Contract packaging houses have to contend with a large mix of die types and products. Flexibility and quick turnaround of package types is a must in this industry. Traditional methods of die encapsulation, (i.e., use of transfer-molding techniques), are only cost effective when producing a large number of components. Liquid encapsulants now provide similar levels of reliability1, and are cost effective...
Technical Library | 2012-12-17 22:05:22.0
Package on Package (PoP) has become a relatively common component being used in mobile electronics as it allows for saving space in the board layout due to the 3D package layout. To insure device reliability through drop tests and thermal cycling as well as for protecting proprietary programming of the device either one or both interconnect layers are typically underfilled. When underfill is applied to a PoP, or any component for that matter, there is a requirement that the board layout is such that there is room for an underfill reservoir so that the underfill material does not come in contact with surrounding components. The preferred method to dispensing the underfill material is through a jetting process that minimizes the wet out area of the fluid reservoir compared to traditional needle dispensing. To further minimize the wet out area multiple passes are used so that the material required to underfill the component is not dispensed at once requiring a greater wet out area. Dispensing the underfill material in multiple passes is an effective way to reduce the wet out area and decrease the distance that surrounding components can be placed, however, this comes with a process compromise of additional processing time in the underfill dispenser. The purpose of this paper is to provide insight to the inverse relationship that exists between the wet out area of the underfill reservoir and the production time for the underfill process.
There is SPI for Screen Printing. AOI for Pick and Place. Now there is RPI (Reflow Process Inspection) for the Reflow Oven. KIC's RPI provides production reports such as yield analysis, DPMO, Pareto Charts, Cpk and much much more. When RPI is use
. The higher the signal frequency, the greater the attenuation, which can cause power level mismatch in the specified data stream, which in turn causes ISI to occur in the signal
. Methods of adjusting the manufacturing process to compensate for an alloy mismatch are presented. Also presented are methods to ensure a matching of alloys by modifications to the raw materials