Technical Library | 1999-08-05 10:45:36.0
In 1998, the International 300 mm Initiative (I300I) demonstration and characterization programs will focus on 180 nm technology capability. To support these activities, I300I and equipment supplier demonstration partners must use starting silicon wafers with key parameters specified at a level appropriate level for 180 nm processing, including contamination and lithographic patterning. This document describes I300I's silicon wafer specifications, as developed with the I300I Silicon Working Group (member company technical advisors) and SEMI Standards.
Technical Library | 2009-05-28 18:15:46.0
Considerable effort is ongoing to improve the efficiency and to move towards high-volume manufacturing of photovoltaic cells. Much attention has been focused on developing in-line processes to replace the current batch processes. A critical process to improve the performance of solar wafers is the application of Dopants. The basic requirement for this process is an automated method for applying a very thin, uniform film of Dopant to the silicon wafer as part of an in-line manufacturing process.
Technical Library | 2009-09-09 15:08:19.0
Stencil printing equipment has traditionally been used in the surface mount assembly industry for solder paste printing. In recent years the flexibility of the tool has been exploited for a wide range of materials and processes to aid semiconductor packaging and assembly. One such application has been the deposition of adhesive coatings onto the backside of silicon wafers.
Technical Library | 2012-02-02 19:09:53.0
A miniaturized wafer-level packaged MEMS acceleration switch with through silicon vias (TSVs) was fabricated, based on technologies suitable for harsh environment applications. The high aspect ratio TSVs were fabricated through the silicon-on-insulator (S
The Foundation for Scientific and Industrial Research - SINTEF
Technical Library | 2021-09-21 20:20:22.0
The electronics industry has been using the epoxy puck for the processing of the vast majority of electronics microsections since the 1970s. Minimal advancements have been seen in the methods used for precision micro-sections of PCBs, PCBAs, and device packages. This paper will discuss different techniques and approaches in performing precision and analytical micro-sections, which fuse the techniques and materials common in preparation of silicon wafers and bulk materials. These techniques have not only been found to produce excellent optical results, but transfer effectively to SEM for high magnification inspection and further analysis with minimal post-lapping preparation needed. Additionally, processing time is reduced primarily due to a significant reduction of bulk material removal earlier in the preparation, therefore needing less removal at later lapping steps compared to traditional sectioning methods. Additional techniques are introduced that mitigate some classic challenges experienced by technicians over the decades.
Technical Library | 2020-01-15 23:54:34.0
Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics.
Technical Library | 2016-08-11 15:49:59.0
The challenge for 3D IC assembly is how to manage warpage and thin wafer handling in order to achieve a high assembly yield and to ensure that the final structure can pass the specified reliability requirements. Our test vehicles have micro-bumped die having pitches ranging from 60um down to 30um. The high density of pads and the large die size, make it extremely challenging to ensure that all of the micro-bump interconnects are attached to a thin Si-interposer. In addition, the low standoff between the die and interposer make it difficult to underfill. A likely approach is to first attach the die to the interposer and then the die/interposer sub-assembly to the substrate. In this scenario, the die/interposer sub-assembly is comparable to a monolithic silicon die that can be flip chip attached to the substrate. In this paper, we will discuss various assembly options and the challenges posed by each. In this investigation, we will propose the best method to do 2.5D assembly in an OSAT(Outsourced Assembly and Test) facility.
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