Technical Library | 1999-05-07 10:11:55.0
The Intel StrataFlashTM memory technology represents a cost breakthrough for flash memory devices by enabling the storage of two bits of data in a single flash memory transistor. This paper will discuss the evolution of the two bit/cell technology from conception to production.
Technical Library | 1999-05-07 10:13:38.0
This paper will review the device physics governing the operation of the industry standard ETOX™ flash memory cell and show how it is ideally suited for multiple bit per cell storage, through its storage of electrons on an electrically isolated floating gate and through its direct access to the memory cell.