Technical Library: z.r (Page 1 of 1)

1CLICKSMT Conformal Coating System -- Solution for photoelectric devices assembly

Technical Library | 2020-05-21 06:58:35.0

1CLICKSMT has recently installed a conformal coating line for a photoelectric devices manufacturer in Thailand.

1 CLICK SMT TECHNOLOGY CO., Limited

Determination of Copper Foil Surface Roughness from Micro-section Photographs

Technical Library | 2013-04-25 11:42:01.0

Specification and control of surface roughness of copper conductors within printed circuit boards (PCBs) are increasingly desirable in multi-GHz designs as a part of signal-integrity failure analysis on high-speed PCBs. The development of a quality-assurance method to verify the use of foils with specified roughness grade during the PCB manufacturing process is also important... First published in the 2012 IPC APEX EXPO technical conference proceedings.

Cisco Systems, Inc.

A Life Prediction Model of Multilayered PTH Based on Fatigue Mechanism

Technical Library | 2019-12-26 19:13:52.0

Plated through hole (PTH) plays a critical role in printed circuit board (PCB) reliability. Thermal fatigue deformation of the PTH material is regarded as the primary factor affecting the lifetime of electrical devices. Numerous research efforts have focused on the failure mechanism model of PTH. However, most of the existing models were based on the one-dimensional structure hypothesis without taking the multilayered structure and external pad into consideration.In this paper, the constitutive relation of multilayered PTH is developed to establish the stress equation, and finite element analysis (FEA) is performed to locate the maximum stress and simulate the influence of the material properties. Finally, thermal cycle tests are conducted to verify the accuracy of the life prediction results. This model could be used in fatigue failure portable diagnosis and for life prediction of multilayered PCB.

Beihang University

MOS Scaling: Transistor Challenges for the 21st Century

Technical Library | 1999-05-07 08:50:40.0

To enable transistor scaling into the 21st century, new solutions such as high dielectric constaConventional scaling of gate oxide thickness, source/drain extension (SDE), junction depths, and gate lengths have enabled MOS gate dimensions to be reduced from 10mm in the 1970’s to a present day size of 0.1mm. To enable transistor scaling into the 21st century, new solutions such as high dielectric constant materials for gate insulation and shallow, ultra low resistivity junctions need to be developed. In this paper, for the first time, key scaling limits are quantified for MOS transistorsnt materials for gate insulation and shallow, ultra low resistivity junctions need to be developed.

Intel Corporation

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