Technical Library | 2013-01-17 15:34:33.0
The use of an electroless nickel, immersion gold (ENIG) surface finish comes with the inherent potential risk of Black Pad failures that can cause fracture embrittlement at the interface between the solder and the metal pad. As yet, there is no conclusive agreed solution to effectively eliminate Black Pad failures. The case studies presented are intended to add to the understanding of the Black Pad failure mechanism and to identify both the plating and the subsequent assembly processes and conditions that can help to prevent the likelihood of Black Pad occurring.
Technical Library | 2017-06-29 16:39:30.0
Currently there is no industry standard test method for measuring dielectric properties of circuit board materials at frequencies greater than about 10 GHz. Various materials vendors and test labs take different approaches to determine these properties. It is common for these different approaches to yield varying values of key properties like permittivity and loss tangent. The D-24C Task Group of IPC has developed this round robin program to assess these various methods from the "bottom up" to determine if standardized methods can be agreed upon to provide the industry with more accurate and valid characteristics of dielectrics used in high-frequency and high-speed applications.
Technical Library | 2017-07-06 15:50:17.0
Head-in-pillow (HiP) is a BGA defect which happens when solder balls and paste can't contact well during reflow soldering. Package warpage was one of the major reasons for HiP formation. In this paper, package warpage was measured and simulated. It was found that the package warpage was sensitive to the thickness of inside chips. A FEM method considering viscoelastic property of mold compound was introduced to simulate package warpage. The CTE mismatch was found contributes to more than 90% of the package warpage value when reflowing at the peak temperature. A method was introduced to measure the warpage threshold, which is the smallest warpage value that may lead to HiP. The results in different atmospheres showed that the warpage threshold was 50μm larger in N2 than that in air, suggesting that under N2 atmosphere the process window for HiP defects was larger than that under air, which agreed with the experiments.
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