Technical Library | 2012-12-14 14:28:20.0
This paper examines the potential failure mechanisms that can damage modern lowvoltage CMOS devices and their relationship to electrical testing. Failure mechanisms such as electrostatic discharge (ESD), CMOS latch-up, and transistor gate oxide degradation can occur as a result of electrical over-voltage stress (EOS). In this paper, EOS due to electrical testing is examined and an experiment is conducted using pulsed voltage waveforms corresponding to conditions encountered during in-circuit electrical testing. Experimental results indicate a correlation between amplitude and duration of the pulse waveform and device degradation due to one or more of the failure mechanisms.
Technical Library | 2016-05-19 16:03:37.0
As consumers become more reliant on their handheld electronic devices and take them into new environments, devices are increasingly exposed to situations that can cause failure. In response, the electronics industry is making these devices more resistant to environmental exposures. Printed circuit board assemblies, handheld devices and wearables can benefit from a protective conformal coating to minimize device failures by providing a barrier to environmental exposure and contamination. Traditional conformal coatings can be applied very thick and often require thermal or UV curing steps that add extra cost and processing time compared to alternative technologies. These coatings, due to their thickness, commonly require time and effort to mask connectors in order to permit electrical conductivity. Ultra-thin fluorochemical coatings, however, can provide excellent protection, are thin enough to not necessarily require component masking and do not necessarily require curing. In this work, ultra-thin fluoropolymer coatings were tested by internal and industry approved test methods, such as IEC (ingress protection), IPC (conformal coating qualification), and ASTM (flowers-of-sulfur exposure), to determine whether this level of protection and process ease was possible.
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