Technical Library | 2015-03-19 20:33:34.0
Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high efficiency, optoelectronic applications.Originally published by the American Physical Society
Technical Library | 2007-07-24 11:47:54.0
The rapid technical development of ultrashort laser systems is creating exciting possibilities for very precise localization of laser energy in time and space. These achievements have triggered novel laser applications based on nonlinear interaction processes. A promising three-dimensional microfabrication method that has recently attracted considerable attention is based on two-photon polymerization with ultrashort laser pulses.
| 1 |
.png)
