Technical Library | 1999-05-07 08:50:40.0
To enable transistor scaling into the 21st century, new solutions such as high dielectric constaConventional scaling of gate oxide thickness, source/drain extension (SDE), junction depths, and gate lengths have enabled MOS gate dimensions to be reduced from 10mm in the 1970’s to a present day size of 0.1mm. To enable transistor scaling into the 21st century, new solutions such as high dielectric constant materials for gate insulation and shallow, ultra low resistivity junctions need to be developed. In this paper, for the first time, key scaling limits are quantified for MOS transistorsnt materials for gate insulation and shallow, ultra low resistivity junctions need to be developed.
Technical Library | 2017-08-02 20:18:21.0
In this rapidly moving electronics market, fast to market with new products is what separates top performing companies from average companies. A survey conducted by Arthur D. Little revealed that "New-Product Development (NPD) productivity in atop performing company is five times what it is in the average company. The top performer gets five times as much new product output for the same investment." What do they know that the rest of us do not? One winning factor is the use of the Robert Cooper process. (...)This paper will present a Lean Six Sigma approach to "right sizing" the Stage Gate process to be efficient, practical, and easy to manage. Various tools of Stage Gate, along with proven best practice, will be covered. In addition, a reduced Stage Gate model will be discussed for simple, low risk projects.
Technical Library | 1999-05-07 10:13:38.0
This paper will review the device physics governing the operation of the industry standard ETOX™ flash memory cell and show how it is ideally suited for multiple bit per cell storage, through its storage of electrons on an electrically isolated floating gate and through its direct access to the memory cell.
Technical Library | 2012-03-15 17:54:47.0
Increases in field-programmable gate array (FPGA) capabilities, combined with growing system complexity, have created many FPGA-based system design challenges. One key challenge is choosing the right FPGA for the design needs, and maximizing the use of FP
Technical Library | 1999-05-07 08:48:52.0
This paper describes how the quality and reliability of Intel's products are designed, measured, modeled, and maintained. Four main reliability topics: ESD protection, electromigration, gate oxide wearout, and the modeling and management of mechanical stresses are discussed. Based on an analysis of the reliability implications of device scaling, we show how these four topics are of prime importance to component reliability...
Technical Library | 1999-08-09 11:36:27.0
Shrinking process technologies and increasing design sizes continually challenge design methodologies and EDA tools to develop at an ever-increasing rate. Before the complexities of deep submicron (DSM), gate and transistor delays dominated interconnect delays, and enabled simplified design methodologies that could focus on device analysis. The advent of DSM processes is changing all of this, invalidating assumptions and approximations that existing design methodologies are based upon, and forcing design teams to re-tool. High-capacity parasitic extraction tools are now critical for successful design tape-outs.
Technical Library | 2012-12-14 14:28:20.0
This paper examines the potential failure mechanisms that can damage modern lowvoltage CMOS devices and their relationship to electrical testing. Failure mechanisms such as electrostatic discharge (ESD), CMOS latch-up, and transistor gate oxide degradation can occur as a result of electrical over-voltage stress (EOS). In this paper, EOS due to electrical testing is examined and an experiment is conducted using pulsed voltage waveforms corresponding to conditions encountered during in-circuit electrical testing. Experimental results indicate a correlation between amplitude and duration of the pulse waveform and device degradation due to one or more of the failure mechanisms.
Technical Library | 2020-07-08 20:05:59.0
There is a compelling need for functional testing of high-speed input/output signals on circuit boards ranging from 1 gigabit per second (Gbps) to several hundred Gbps. While manufacturing tests such as Automatic Optical Inspection (AOI) and In-Circuit Test (ICT) are useful in identifying catastrophic defects, most high-speed signals require more scrutiny for failure modes that arise due to high-speed conditions, such as jitter. Functional ATE is seldom fast enough to measure high-speed signals and interpret results automatically. Additionally, to measure these adverse effects it is necessary to have the tester connections very close to the unit under test (UUT) as lead wires connecting the instruments can distort the signal. The solution we describe here involves the use of a field programmable gate array (FPGA) to implement the test instrument called a synthetic instrument (SI). SIs can be designed using VHDL or Verilog descriptions and "synthesized" into an FPGA. A variety of general-purpose instruments, such as signal generators, voltmeters, waveform analyzers can thus be synthesized, but the FPGA approach need not be limited to instruments with traditional instrument equivalents. Rather, more complex and peculiar test functions that pertain to high-speed I/O applications, such as bit error rate tests, SerDes tests, even USB 3.0 (running at 5 Gbps) protocol tests can be programmed and synthesized within an FPGA. By using specific-purpose test mechanisms for high-speed I/O the test engineer can reduce test development time. The synthetic instruments as well as the tests themselves can find applications in several UUTs. In some cases, the same test can be reused without any alteration. For example, a USB 3.0 bus is ubiquitous, and a test aimed at fault detection and diagnoses can be used as part of the test of any UUT that uses this bus. Additionally, parts of the test set may be reused for testing another high-speed I/O. It is reasonable to utilize some of the test routines used in a USB 3.0 test, in the development of a USB 3.1 (running at 10 Gbps), even if the latter has substantial differences in protocol. Many of the SI developed for one protocol can be reused as is, while other SIs may need to undergo modifications before reuse. The modifications will likely take less time and effort than starting from scratch. This paper illustrates an example of high-speed I/O testing, generalizes failure modes that are likely to occur in high-speed I/O, and offers a strategy for testing them with SIs within FPGAs. This strategy offers several advantages besides reusability, including tester proximity to the UUT, test modularization, standardization approaching an ATE-agnostic test development process, overcoming physical limitations of general-purpose test instruments, and utilization of specific-purpose test instruments. Additionally, test instrument obsolescence can be overcome by upgrading to ever-faster and larger FPGAs without losing any previously developed design effort. With SIs and tests scalable and upward compatible, the test engineer need not start test development for high-speed I/O from scratch, which will substantially reduce time and effort.
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