Technical Library | 1999-05-06 13:38:45.0
This paper traces the key steps that led to the invention of the integrated circuit (IC). The first part of this paper reviews the steady improvements in the performance and fabrication of single transistors in the decade after the Bell Labs breakthrough work in 1947. It sketches the various developments needed to produce a practical IC. In addition, the more advanced processes such as diffusion, oxide masking, photolithography, and epitaxy, which culminated in the planar process, are summarized.
Technical Library | 1999-07-21 08:49:49.0
As the role of direct-chip-attachment increases in the electronics industry, the reliability and performance of COB packaging materials becomes an increasing concern. Although many factors influence component reliability, the biggest determinants of performance are often the glass transition temperature (Tg) and the coefficient of thermal expansion (CTE) of the encapsulant or underfill. This paper discusses exactly what these properties are, how they are measured, and why they are important to device-reliability.
Technical Library | 2009-02-26 03:25:09.0
STI has developed a patented1 packaging technology coined Imbedded Component/Die Technology (IC/DT®) to integrate multiple subsystems within an electronics assembly into a single, advanced, high-density assembly. Imbedded Component/Die Technology (IC/DT®) enables the manufacturing and assembly of smaller, lighter, and more technologically advanced high density CCAs through imbedding unpackaged components in a 3-D laminate substrate with integrated thermal management
Technical Library | 2009-05-21 13:41:05.0
Failure due to board flex cracks persists as the dominant failure mode in multi-layer ceramic capacitors (MLCC). (...) This paper is intended to show the impact of temperature cycling, high-temperature life tests, and multiple bend exposures to the MLCC with this flexible termination.
Technical Library | 2020-11-10 15:43:25.0
Flexible hybrid electronics (FHE) interface rigid electronic components with flexible sensors, circuits, and substrates. This paper reports the reliability improvement of a FHE Human Performance Monitor (HPM), designed to monitor electrocardiography (ECG) signals.
Technical Library | 2021-03-18 20:07:08.0
X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies.
Technical Library | 2021-05-13 16:09:02.0
The 2017 iNEMI Board and Assembly Roadmap forecasts that, due to economic, environmental and technical drivers, use of low temperature solder pastes will increase significantly and reach 10% of all solder paste used for board assembly by 2021.
Technical Library | 2023-05-02 19:16:57.0
1.5 with a 150μm specification window. For 0201 components, the minimum requirement is CpK > 2.0 with a 100μm specification window. The spec window may need to be reduced down to 75μm if the controls for high volume manufacturing are insufficient. Also directly impacting the placement quality is the ability to apply sufficient solder consistently to the board. The goal is to maintain current printing practices, but the effect of powder size will be examined. This paper will evaluate the impact of placement accuracy and solder powder size on 0201 manufacturing quality.
Technical Library | 1999-05-07 08:50:40.0
To enable transistor scaling into the 21st century, new solutions such as high dielectric constaConventional scaling of gate oxide thickness, source/drain extension (SDE), junction depths, and gate lengths have enabled MOS gate dimensions to be reduced from 10mm in the 1970’s to a present day size of 0.1mm. To enable transistor scaling into the 21st century, new solutions such as high dielectric constant materials for gate insulation and shallow, ultra low resistivity junctions need to be developed. In this paper, for the first time, key scaling limits are quantified for MOS transistorsnt materials for gate insulation and shallow, ultra low resistivity junctions need to be developed.
Technical Library | 2009-10-08 01:58:04.0
In the present study, we report novel ferroelectric-epoxy based polymer nanocomposites that have the potential to surpass conventional composites to produce thin film capacitors over large surface areas, having high capacitance density and low loss. Specifically, novel crack resistant and easy to handle Resin Coated Copper Capacitive (RC3) nanocomposites capable of providing bulk decoupling capacitance for a conventional power-power core, or for a three layer Voltage-Ground-Voltage type power core, is described.
