Technical Library | 1999-05-07 08:50:40.0
To enable transistor scaling into the 21st century, new solutions such as high dielectric constaConventional scaling of gate oxide thickness, source/drain extension (SDE), junction depths, and gate lengths have enabled MOS gate dimensions to be reduced from 10mm in the 1970’s to a present day size of 0.1mm. To enable transistor scaling into the 21st century, new solutions such as high dielectric constant materials for gate insulation and shallow, ultra low resistivity junctions need to be developed. In this paper, for the first time, key scaling limits are quantified for MOS transistorsnt materials for gate insulation and shallow, ultra low resistivity junctions need to be developed.
Technical Library | 1999-05-06 13:38:45.0
This paper traces the key steps that led to the invention of the integrated circuit (IC). The first part of this paper reviews the steady improvements in the performance and fabrication of single transistors in the decade after the Bell Labs breakthrough work in 1947. It sketches the various developments needed to produce a practical IC. In addition, the more advanced processes such as diffusion, oxide masking, photolithography, and epitaxy, which culminated in the planar process, are summarized.
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