Technical Library | 2017-01-23 21:12:01.0
"Water is not a problem of the future, but a key issue of our time for businesses: In the future, urgent water risks will increase in many areas of the world. A growing population, a changing consumer behavior and climate change will have an immediate impact on the availability and quality of water and thus build further pressure on governments, businesses and societies." (Quote from the summary of the 2014 WWF study "The imported risk. Germany's water risk in the age of globalization.")
Technical Library | 2019-03-25 12:45:56.0
Work instructions are time consuming to generate for engineers, often requiring regeneration from scratch to address very minor changes. They need to be produced in varying levels of detail, with varying guidelines, for multiple stations, operators and lines. Minor component, station or process changes – down to the modification of an individual BOM component – can cause headaches when attempting to maintain consistency across multiple work instructions that are touched by the change.The solution presented here improves efficiency and saves engineering time by making use of a database driven approach. Manufacturing details, component information, process guidelines, annotations, machine-specific data, and more can be stored in one central database. Any information stored in this single repository can then be modified quickly in one location and automatically propagate seamlessly throughout multiple work instructions. These can be instantly printed out or displayed on screens at appropriately affected stations with the simple click of a button, as opposed to regenerating from scratch, or going in and reviewing many documents to find and update with the change.
Technical Library | 1999-05-07 08:50:40.0
To enable transistor scaling into the 21st century, new solutions such as high dielectric constaConventional scaling of gate oxide thickness, source/drain extension (SDE), junction depths, and gate lengths have enabled MOS gate dimensions to be reduced from 10mm in the 1970’s to a present day size of 0.1mm. To enable transistor scaling into the 21st century, new solutions such as high dielectric constant materials for gate insulation and shallow, ultra low resistivity junctions need to be developed. In this paper, for the first time, key scaling limits are quantified for MOS transistorsnt materials for gate insulation and shallow, ultra low resistivity junctions need to be developed.
Technical Library | 2013-06-27 14:00:27.0
While IC level ESD design and the necessary protection levels are well understood, system ESD protection strategy and design efficiency have only been dealt with in an ad hoc manner. This is most obvious when we realize that a consolidated approach to system level ESD design between system manufacturers and chip suppliers has been rare. This White Paper discusses these issues in the open for the first time, and offers new and relevant insight for the development of efficient system level ESD design.
Technical Library | 2015-03-19 20:33:34.0
Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high efficiency, optoelectronic applications.Originally published by the American Physical Society