Technical Library | 2011-07-28 18:52:34.0
Electronic circuit boards create some of the most complex and highly three dimensional fluid flows in both air and liquid. The combination of open channel (clearance to the next card above the components) and large protrusions (components, e.g., BGAs, PQF
Technical Library | 2012-10-25 16:34:02.0
First published in the 2012 IPC APEX EXPO technical conference proceedings. This paper will examine stencil technologies (including Laser and Electroform), Aperture Wall coatings (including Nickel-Teflon coatings and Nano-coatings), and how these parameters influence paste transfer for miniature devices with Area Ratios less than the standard recommended lower limit of .5. A matrix of print tests will be utilized to compare paste transfer and measure the effectiveness of the different stencil configurations. Area Ratios ranging from .32 to .68 will be investigated.
Technical Library | 2015-03-19 20:33:34.0
Silicon is arguably the best electronic material, but it is not a good optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable band gap. At low hydrogen concentrations, four ground states of single- and double sided hydrogenated BS are characterized by dipole-allowed direct (or quasidirect) band gaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-sided hydrogenated BS structures exhibit direct (or quasidirect) band gaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high efficiency, optoelectronic applications.Originally published by the American Physical Society
Technical Library | 2020-01-15 23:54:34.0
Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics.
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