Technical Library | 2010-10-13 17:29:21.0
The number of failures caused by electrostatic discharges (ESD) has been increasing for some time now. So, it is necessary for everyone, who handles electrostatic sensitive devices (ESDS), to know the reasons of such failures. This presentation will give
Technical Library | 1999-08-05 10:34:17.0
This document defines a set of standard test structures with which to benchmark the electrostatic discharge (ESD) robustness of CMOS technologies. The test structures are intended to be used to evaluate the elements of an integrated circuit in the high current and voltage ranges characteristic of ESD events. Test structures are given for resistors, diodes, MOS devices, interconnects, silicon control rectifiers, and parasitic devices. The document explains the implementation strategy and the method of tabulating ESD robustness for various technologies.
Technical Library | 2015-10-08 17:40:35.0
With the push for ever improving performance on semiconductor component I/O interfaces, semiconductor components are being driven into a realm which makes them more sensitive to electrostatic discharge, potentially increasing in sensitivity by 50% every 3-5 years. Today, the majority of modern day semiconductor components are being designed to meet 250Volts of charge device model sensitivity, and that could decrease to 125Volts in the next 3-5 years, and could again decrease to 50Volts-70Volts in the following 3-5 years. The entire electronics industry must prepare for this challenge.
Technical Library | 1999-05-09 13:07:16.0
This paper will give the reader a general understanding of EOS and ESD phenomena. It specifically addresses hand soldering's role in EOS and ESD and how to protect against and test for potential problems. It discusses how Metcal Systems address EOS and ESD concerns and how they differ from conventional soldering systems.
Technical Library | 2014-07-31 16:36:59.0
Metal whiskers often grow across leads of electric equipment and electronic package causing current leakage or short circuits and raising significant reliability issues. The nature of metal whiskers remains a mystery after several decades of research. Here, the existence of metal whiskers is attributed to the energy gain due to electrostatic polarization of metal filaments in the electric field. The field is induced by surface imperfections: contaminations, oxide states, grain boundaries, etc. A proposed theory provides closed form expressions and quantitative estimates for the whisker nucleation and growth rates, explains the range of whisker parameters and effects of external biasing, and predicts statistical distribution of their lengths.
Technical Library | 2014-04-03 18:01:13.0
A system level modeling methodology is presented and validated on a simple case. It allows precise simulations of electrostatic discharge (ESD) stress propagation on a printed circuit board (PCB). The proposed model includes the integrated circuit (IC) ESD protection network, IC package, PCB lines, passives components, and externals elements. The impact of an external component on the ESD propagation paths into an IC is demonstrated. Resulting current and voltage waveforms are analyzed to highlight the interactions between all the elements of an operating PCB. A precise measurement technique was designed and used to compare with the simulation results. The model proposed in this paper is able to predict, with good accuracy, the propagation of currents and voltages into the whole system during ESD stress. It might be used to understand why failures occur and how to fix them with the most suitable solution.
Technical Library | 2012-12-14 14:28:20.0
This paper examines the potential failure mechanisms that can damage modern lowvoltage CMOS devices and their relationship to electrical testing. Failure mechanisms such as electrostatic discharge (ESD), CMOS latch-up, and transistor gate oxide degradation can occur as a result of electrical over-voltage stress (EOS). In this paper, EOS due to electrical testing is examined and an experiment is conducted using pulsed voltage waveforms corresponding to conditions encountered during in-circuit electrical testing. Experimental results indicate a correlation between amplitude and duration of the pulse waveform and device degradation due to one or more of the failure mechanisms.
| 1 |
