Technical Library | 1999-05-09 13:07:16.0
This paper will give the reader a general understanding of EOS and ESD phenomena. It specifically addresses hand soldering's role in EOS and ESD and how to protect against and test for potential problems. It discusses how Metcal Systems address EOS and ESD concerns and how they differ from conventional soldering systems.
Technical Library | 2019-11-12 02:09:22.0
Thermal shock test chamber can be used for testing the chemical change or physical damage on composite materials caused by the thermal expansion and contraction of the sample in the shortest time,which is subjected to extremely and continuous high and low temperature environment.so how to check the temperature recovery time of this chamber? Normally we take following steps to inspect the temepratuire recovering time: 1.Install the temperature sensor at the specified position, and adjust the temperature controller of hot zone and cold zone to the required nominal temperature respectively. 2.The temperature increases and reduces respectively,30min after temperature in two zones reach stable status,record temperature value of the measuring point,pls set the temperature value of two zones to be required nominal temperature. 3.The temperature shock test chamber automatically places the inspected load into theh ot zone,select the corresponding retention time according to regulated standard. 4.Set the transfer time,then the inspection load is transferred from hot zone to cold zone, and the temperature of the measuring point is observed and recorded, and then the reverse conversion of the load from cold zone to hot zone is carried out according to the same method, and the temperature of the measuring point is observed and recorded. www.climatechambers.com
Technical Library | 1999-08-05 10:34:17.0
This document defines a set of standard test structures with which to benchmark the electrostatic discharge (ESD) robustness of CMOS technologies. The test structures are intended to be used to evaluate the elements of an integrated circuit in the high current and voltage ranges characteristic of ESD events. Test structures are given for resistors, diodes, MOS devices, interconnects, silicon control rectifiers, and parasitic devices. The document explains the implementation strategy and the method of tabulating ESD robustness for various technologies.
Technical Library | 2012-12-14 14:28:20.0
This paper examines the potential failure mechanisms that can damage modern lowvoltage CMOS devices and their relationship to electrical testing. Failure mechanisms such as electrostatic discharge (ESD), CMOS latch-up, and transistor gate oxide degradation can occur as a result of electrical over-voltage stress (EOS). In this paper, EOS due to electrical testing is examined and an experiment is conducted using pulsed voltage waveforms corresponding to conditions encountered during in-circuit electrical testing. Experimental results indicate a correlation between amplitude and duration of the pulse waveform and device degradation due to one or more of the failure mechanisms.
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