Technical Library | 1999-08-05 10:34:17.0
This document defines a set of standard test structures with which to benchmark the electrostatic discharge (ESD) robustness of CMOS technologies. The test structures are intended to be used to evaluate the elements of an integrated circuit in the high current and voltage ranges characteristic of ESD events. Test structures are given for resistors, diodes, MOS devices, interconnects, silicon control rectifiers, and parasitic devices. The document explains the implementation strategy and the method of tabulating ESD robustness for various technologies.
Technical Library | 2012-12-14 14:28:20.0
This paper examines the potential failure mechanisms that can damage modern lowvoltage CMOS devices and their relationship to electrical testing. Failure mechanisms such as electrostatic discharge (ESD), CMOS latch-up, and transistor gate oxide degradation can occur as a result of electrical over-voltage stress (EOS). In this paper, EOS due to electrical testing is examined and an experiment is conducted using pulsed voltage waveforms corresponding to conditions encountered during in-circuit electrical testing. Experimental results indicate a correlation between amplitude and duration of the pulse waveform and device degradation due to one or more of the failure mechanisms.
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