Technical Library | 2019-06-11 09:34:37.0
Recently ACI Technologies was asked to perform failure analysis on a hermetically sealed transistor for potential electrostatic discharge (ESD) or electrostatic overstress (EOS). ACI was asked to determine if the field-failed transistor was damaged by ESD or EOS. In order to properly assess the failure, additional samples were requested.
Technical Library | 1999-05-06 13:35:26.0
The invention of the transistor almost fifty years ago was one of the most important technical developments of this century. It has had profound impact on the way we live and the way we work. This paper describes the events that led to the invention of the point-contact transistor in December of 1947. It continues with the development of the theory of the junction transistor in early 1948 and the fabrication of the first grown-junction transistor in 1950.
Technical Library | 1999-05-06 13:41:18.0
Invented in 1971, the microprocessor evolved from the inventions of the transistor (1947) and the integrated circuit (1958). Essentially a computer on a chip, it is the most advanced application of the transistor. The influence of the microprocessor today is well known, but in 1971 the effect the microprocessor would have on everyday life was a vision beyond even those who created it. This paper presents the history of the microprocessor in the context of the technology and applications that drove its continued advancements.
Technical Library | 1999-05-06 10:42:58.0
Many of us tend to think of semiconductors as low power, cool devices. But as the number of transistors in an integrated circuit increases, so does power consumption increases and the need to dissipate the resulting heat load. Microprocessors, in particular, consume more and more power with increase in speed and complexity.
Technical Library | 1999-05-07 10:11:55.0
The Intel StrataFlashTM memory technology represents a cost breakthrough for flash memory devices by enabling the storage of two bits of data in a single flash memory transistor. This paper will discuss the evolution of the two bit/cell technology from conception to production.
Technical Library | 1999-05-07 08:50:40.0
To enable transistor scaling into the 21st century, new solutions such as high dielectric constaConventional scaling of gate oxide thickness, source/drain extension (SDE), junction depths, and gate lengths have enabled MOS gate dimensions to be reduced from 10mm in the 1970’s to a present day size of 0.1mm. To enable transistor scaling into the 21st century, new solutions such as high dielectric constant materials for gate insulation and shallow, ultra low resistivity junctions need to be developed. In this paper, for the first time, key scaling limits are quantified for MOS transistorsnt materials for gate insulation and shallow, ultra low resistivity junctions need to be developed.
Technical Library | 2016-06-30 14:00:32.0
When designing PLLs in nanometer CMOS, it is essential to validate the closed-loop PLL performance metrics with nanometer SPICE accuracy before going to silicon. Transistor-level, closed-loop PLL verification has been impractical due to traditional SPICE and RF simulator performance and capacity limitations. By using Analog FastSPICE, designers dont have to trade accuracy for performance. Read this white paper to see how AFS: Delivers closed-loop PLL transistor-level verification Supports direct jitter measurements Produces phase noise results correlating within 1-2dB of silicon
Technical Library | 1999-05-06 13:38:45.0
This paper traces the key steps that led to the invention of the integrated circuit (IC). The first part of this paper reviews the steady improvements in the performance and fabrication of single transistors in the decade after the Bell Labs breakthrough work in 1947. It sketches the various developments needed to produce a practical IC. In addition, the more advanced processes such as diffusion, oxide masking, photolithography, and epitaxy, which culminated in the planar process, are summarized.
Technical Library | 2014-12-04 18:27:40.0
A review on applications of metal-based inkjet inks for printed electronics with a particular focus on inks containing metal nanoparticles, complexes and metallo-organic compounds. The review describes the preparation of such inks and obtaining conductive patterns by using various sintering methods: thermal, photonic, microwave, plasma, electrical, and chemically triggered. Various applications of metal-based inkjet inks (metallization of solar cell, RFID antennas, OLEDs, thin film transistors, electroluminescence devices) are reviewed.
Technical Library | 2018-06-27 16:47:13.0
Nowadays, inkjet-printed devices such as transistors are still unstable in air and have poor performances. Moreover, the present electronics applications require a high degree of reliability and quality of their properties. In order to accomplish these application requirements, hybrid electronics is fulfilled by combining the advantages of the printing technologies with the surface-mount technology. In this work, silver nanoparticle-based inkjet ink (AgNP ink) is used as a novel approach to connect surface-mount devices (SMDs) onto inkjet-printed pads, conducted by inkjet printing technology
